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| Si5519DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) () 0.036 at VGS = 4.5 V 0.063 at VGS = 2.5 V 0.064 at VGS = - 4.5 V 0.095 at VGS = - 2.5 V ID (A)a Qg (Typ.) 6.0 6.0 - 6.0 - 6.0 6.0 nC 5.4 nC FEATURES * Halogen-free * TrenchFET(R) Power MOSFETs RoHS APPLICATIONS * Portable DC-DC Applications COMPLIANT P-Channel - 20 PowerPAK ChipFET Dual D1 1 S1 G1 D1 S2 2 3 S2 G2 4 G2 8 7 G1 Marking Code EB XXX Lot Traceability and Date Code Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET D1 D2 6 5 D2 Bottom View Ordering Information: SI5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS N-Channel 20 12 6.0a 6.0a 6.0a, b, c 4.9b, c 25 6.0a 1.9b, c 10.4 6.6 2.27b, c 1.45b, c - 55 to 150 260 - 6.0a - 4.8b, c - 3.8b, c - 20 - 6.0a - 1.9b, c 10.4 6.6 2.27b, c 1.45b, c 6.0a P-Channel - 20 Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Source Drain Current Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS N-Channel Parameter b, f P-Channel Typ. 43 9.5 Max. 55 12 Unit Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 C/W. Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1 t5s Symbol RthJA RthJC Typ. 43 9.5 Max. 55 12 Si5519DU Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = - 250 A ID = 250 A ID = - 250 A ID = 250 A ID = - 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS = - 20 V, VGS = 0 V, TJ = 55 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 6.1 A Drain-Source On-State Resistanceb RDS(on) VGS = - 4.5 V, ID = - 4.8 A VGS = 2.5 V, ID = 1.6 A VGS = - 2.5 V, ID = - 1.05 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 4.8 A Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 3.2 A N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.8 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 3.2 A f = 1 MHz N-Ch N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 660 475 108 135 65 100 11.65 11.7 5.4 6.0 1.48 1.05 1.4 2.1 5.2 9.8 17.5 18 8.1 9.0 nC pF gfs VDS = 10 V, ID = 6.7 A VDS = - 10 V, ID = - 4.8 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 25 - 10 0.030 0.053 0.052 0.078 15 9.5 0.036 0.064 0.063 0.095 S 0.6 - 0.6 20 - 20 20.74 - 18.2 4.0 1.83 1.8 - 1.8 100 - 100 1 -1 10 - 10 A A V nA mV/C V Symbol Test Conditions Min. Typ.a Max. Unit www.vishay.com 2 Document Number: 74406 S-81449-Rev. B, 23-Jun-08 Si5519DU Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamic a Symbol Test Conditions N-Ch N-Channel VDD = 10 V, RL = 2.04 ID 4.9 A, VGEN = 4.5 V, Rg = 1 P-Channel VDD = - 10 V, RL = 2.63 ID - 3.8 A, VGEN = - 4.5 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS = 3.1 A, VGS = 0 V IS = - 2.2 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Channel IF = 3.1 A, dI/dt = 100 A/s, TJ = 25 C P-Channel IF = - 2.2 A, dI/dt = - 100 A/s, TJ = 25 C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ.a 5.5 4.5 15 11 22 25 6 8.5 Max. 8.25 6.8 22.5 16.5 33 37.5 9 12.8 8.6 - 8.6 25 - 20 Unit Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time td(on) tr td(off) tf ns IS ISM VSD trr Qrr ta tb TC = 25 C A 0.8 - 0.8 14.4 20.6 8 7.2 10 6.6 4.4 14 1.2 - 1.2 21.6 31 12 11 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 3 Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 VGS = 5 V thru 3.5 V 20 I D - Drain Current (A) I D - Drain Current (A) 2.5 3.0 2.0 15 VGS = 3 V 1.5 10 VGS = 2.5 V 5 VGS = 2 V 0 0 1 2 3 4 5 1.0 TJ = 125 C TJ = 25 C TJ = - 55 C 0.5 1.0 1.5 2.0 2.5 3.0 0.5 0.0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 1000 Transfer Characteristics RDS(on) - On-Resistance () 0.16 C - Capacitance (pF) 800 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 600 Ciss 400 200 Crss 0 4 Coss 0.00 0 5 10 ID - Drain Current (A) 15 20 0 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 6.7 A V S - Gate-to-Source Voltage (V) G 8 RDS(on) - On-Resistance (Normalized) VDS = 10 V 6 VGS = 16 V 4 1.4 1.6 Capacitance VGS = 4.5 V, ID = 5 A 1.2 VGS = 2.5 V, ID = 5 A 1.0 2 0.8 0 0 2 4 6 8 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 74406 S-81449-Rev. B, 23-Jun-08 Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 RDS(on) - Drain-to-Source On-Resistance () 0.10 ID = 5 A 0.08 10 I S - Source Current (A) TJ = 150 C 1 TJ = 25 C 0.06 TA = 125 C 0.04 TA = 25 C 0.02 0.1 0.01 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.6 ID = 250 A 30 On-Resistance vs. Gate-to-Source Voltage 1.4 25 20 VGS(th) (V) Power (W) 1.2 15 1.0 10 0.8 5 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 BVDSS Limited 0.01 TA = 25 C Single Pulse 0.001 0.1 1 10 100 DC Single Pulse Power VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 5 Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 16 14 12 Power Dissipation (W) 12 ID - Drain Current (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 8 Package Limited 4 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74406 S-81449-Rev. B, 23-Jun-08 Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 1 10 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Single Pulse 0.01 0.0001 0.02 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 7 Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 5 V thru 3 V 15 I D - Drain Current (A) VGS = 2.5 V ID - Drain Current (A) 1.5 2.0 10 VGS = 2 V 5 VGS = 1.5 V 0 0 1 2 3 4 5 1.0 TC = 125 C 0.5 TC = 25 C TC = - 55 C 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 800 Transfer Characteristics RDS(on) - On-Resistance () 0.16 600 C - Capacitance (pF) 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 Crss 0.00 0 5 10 ID - Drain Current (A) 15 20 0 0 4 8 12 16 20 Ciss 400 200 Coss VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 5.4 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 RDS(on) - On-Resistance (Normalized) 1.4 1.6 Capacitance VGS = 4.5 V ID = 4 A 1.2 VGS = 2.5 V ID = 4 A 4 VGS = 16 V 2 1.0 0.8 0 0 2 4 6 8 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 74406 S-81449-Rev. B, 23-Jun-08 Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 RDS(on) - Drain-to-Source On-Resistance () 0.20 ID = 4 A 0.16 10 I S - Source Current (A) 1 TJ = 150 C 0.1 TJ = 25 C 0.12 TA = 125 C 0.08 0.01 0.04 TA = 25 C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.2 ID = 250 A 1.1 30 On-Resistance vs. Gate-to-Source Voltage 25 20 VGS(th) (V) Power (W) 1.0 15 0.9 10 0.8 5 0.7 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 T - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 10 ms I D - Drain Current (A) 1 100 ms 1s 10 s 0.1 BVDSS Limited 0.01 TA = 25 C Single Pulse 0.001 0.1 1 10 100 DC Single Pulse Power VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 9 Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 12 14 12 Power Dissipation (W) 9 I D - Drain Current (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Package Limited 6 3 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 74406 S-81449-Rev. B, 23-Jun-08 Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 1 10 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Single Pulse 0.01 0.0001 0.02 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74406. Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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